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1

The effect of atomic hydrogen flow on electrical resistance of the transition metal films

V. Kagadei, E. Nefyodtsev, D. Proskurovsky, Sv. Romanenko, N. Shevchenko, D. Grambole, R. Groetzschel, F. Herrmann, Yu. Ivanov

Journal:

Sensors and Actuators A: Physical

Year:

2004

Language:

english

File:

PDF, 185 KB

english, 2004

2

Effect of hydrogenation on the properties of metal-GaAs Schottky barrier contacts

V. G. Bozhkov, V. A. Kagadei, N. A. Torkhov

Journal:

Year:

1998

Language:

english

File:

PDF, 88 KB

english, 1998

3

Influence of annealing on the metal/semiconductor contacts deposited on sulfur-treatedn-GaAs surface

E. V. Erofeev, V. A. Kagadei

Journal:

Year:

2011

Language:

english

File:

PDF, 405 KB

english, 2011

4

Features of the formation of a low-resistance Ge/Au/Ni/Ti/Au ohmic contact ton-i-GaAs

E. V. Erofeev, V. A. Kagadei

Journal:

Russian Microelectronics

Year:

2012

Language:

english

File:

PDF, 1.32 MB

english, 2012

5

[IEEE 2011 International Siberian Conference on Control and Communications (SIBCON 2011) - Krasnoyarsk, Russia (2011.09.15-2011.09.16)] 2011 International Siberian Conference on Control and Communications (SIBCON) - A gold free fully Cu/Ge metalized GaAs pHEMT for the high frequency applications

Erofeev, E. V., Kagadei, V. A., Kazimirov, A. I.

Year:

2011

Language:

english

File:

PDF, 715 KB

english, 2011

6

SPIE Proceedings [SPIE International Conference on Micro- and Nano-Electronics 2009 - Zvenigorod, Russian Federation (Monday 5 October 2009)] International Conference on Micro- and Nano-Electronics 2009 - Low-resistance Ge/Au/Ni/Ti/Au-based ohmic contact to n-GaAs

Kagadei, V., Valiev, Kamil A., Orlikovsky, Alexander A., Erofeev, E.

Year:

2009

Language:

english

File:

PDF, 1.69 MB

english, 2009

7

One more deep level related to the metastable hydrogen-related defects in n-GaAs epilayers

O.A. Soltanovich, E.B. Yakimov, E.V. Erofeev, V.A. Kagadei, J. Weber

Journal:

Physica B: Condensed Matter

Year:

2009

Language:

english

File:

PDF, 236 KB

english, 2009

8

Annealing behavior of the system of metastable hydrogen-related defects M3/M4 in n-GaAs

O.A. Soltanovich, E.B. Yakimov, V.A. Kagadei, S.V. Romanenko

Journal:

Physica B: Condensed Matter

Year:

2003

Language:

english

File:

PDF, 192 KB

english, 2003

9

Study of depth distribution of metastable hydrogen-related defects in n-type GaAs

O.A. Soltanovich, E.B. Yakimov, V.A. Kagadei, L.M. Romas

Journal:

Physica B: Condensed Matter

Year:

2001

Language:

english

File:

PDF, 122 KB

english, 2001

10

Effect of atomic hydrogen on the properties of metal-GaAs Schottky barrier contacts

V. G. Bozhkov, V. A. Kagadei, N. A. Torkhov

Journal:

Russian Physics Journal

Year:

1997

Language:

english

File:

PDF, 431 KB

english, 1997

11

Residual-Photoresist Removal from Si and GaAs Surfaces by Atomic-Hydrogen Flow Treatment

E. V. Anishchenko, V. A. Kagadei, E. V. Nefedtsev, K. V. Oskomov, D. I. Proskurovski, S. V. Romanenko

Journal:

Russian Microelectronics

Year:

2005

Language:

english

File:

PDF, 165 KB

english, 2005

12

Influence of the Self-Heated Cathode Geometry on the Parameters of a Low-Pressure Discharge in CrossedE×HFields

L. A. Zyul’kova, A. V. Kozyrev, V. A. Kagadei, D. I. Proskurovskii

Journal:

Russian Physics Journal

Year:

2005

Language:

english

File:

PDF, 289 KB

english, 2005

13

Suppression of parasitic backgating by hydrogenation of ion-doped gallium arsenide structures

V. A. Kagadei, Yu. V. Lilenko, L. S. Shirokova, D. I. Proskurovskii

Journal:

Technical Physics Letters

Year:

1999

Language:

english

File:

PDF, 31 KB

english, 1999

14

The effect of hydrogenation on the photoconductivity of ion-doped gallium arsenide structures

V. A. Kagadei, Yu. V. Lilenko, L. S. Shirokova, D. I. Proskurovskii

Journal:

Technical Physics Letters

Year:

2000

Language:

english

File:

PDF, 124 KB

english, 2000

15

A comparative study of the atomic hydrogen penetration into thin vanadium films and silicon oxide-gallium arsenide structures

V. G. Bozhkov, V. A. Kagadei, D. I. Proskurovskii, L. M. Romas’

Journal:

Technical Physics Letters

Year:

2000

Language:

english

File:

PDF, 45 KB

english, 2000

16

Current-voltage characteristics of a reflex discharge with a hollow cathode and self-heating electrode

V. A. Kagadei, A. V. Kozyrev, I. V. Osipov, D. I. Proskurovskii

Journal:

Technical Physics

Year:

2001

Language:

english

File:

PDF, 90 KB

english, 2001

17

The effect of hydrogenation on the sink breakdown voltage of transistors based on ion-doped gallium arsenide structures

V. A. Kagadei, E. V. Nefyodtsev, D. I. Proskurovsky, S. V. Romanenko, L. S. Shirokova

Journal:

Technical Physics Letters

Year:

2003

Language:

english

File:

PDF, 48 KB

english, 2003

18

Atomic hydrogen flux density measured using thin metal films

V. A. Kagadei, E. V. Nefyodtsev, D. I. Proskurovsky, S. V. Romanenko

Journal:

Technical Physics Letters

Year:

2003

Language:

english

File:

PDF, 54 KB

english, 2003

19

Removal of fluoropolimers from the surface of silicon structures by treatment in an atomic hydrogen flow

E. V. Anishchenko, V. A. Kagadei, E. V. Nefedtsev, D. I. Proskurovskii, S. V. Romanenko

Journal:

Year:

2005

Language:

english

File:

PDF, 155 KB

english, 2005

20

A thin-film resistive sensor for measuring atomic hydrogen flux density

V. A. Kagadei, E. V. Nefedtsev, D. I. Proskurovskii, S. V. Romanenko, V. V. Chupin

Journal:

Instruments and Experimental Techniques

Year:

2008

Language:

english

File:

PDF, 208 KB

english, 2008

21

Influence of silicon processing in atomic hydrogen on the formation of local molten regions as a result of pulsed irradiation with optical photons

M. V. Zakharov, V. A. Kagadei, T. N. L’vova, E. V. Nefedtsev, K. V. Oskomov, D. I. Proskurovsky, S. V. Romanenko, Ya. V. Fattakhov, I. B. Khaibullin

Journal:

Year:

2006

Language:

english

File:

PDF, 251 KB

english, 2006

22

Numerical simulation of the process of hydrogenation of GaAs

V. A. Kagadei, E. V. Nefyodtsev

Journal:

Year:

2009

Language:

english

File:

PDF, 258 KB

english, 2009

23

Numerical simulation of hydrogenation of GaAs at the cooling stage

V. A. Kagadei, E. V. Nefyodtsev

Journal:

Year:

2010

Language:

english

File:

PDF, 232 KB

english, 2010

24

Study of the influence of the sulfide and ultraviolet treatment of then-i-GaAs surface on the parameters of ohmic contacts

S. M. Avdeev, E. V. Erofeev, V. A. Kagadei

Journal:

Year:

2011

Language:

english

File:

PDF, 366 KB

english, 2011

25

Kinetics of Hydrogenation and Variations in Resistance of Vanadium Thin Films Treated in Atomic Hydrogen Flow

V. A. Kagadei, E. V. Nefyodtsev, D. I. Proskurovsky, S. V. Romanenko, N. A. Shevchenko, R. Groetzschel, D. Grambole, F. Herrmann, Yu. F. Ivanov

Journal:

Russian Physics Journal

Year:

2003

Language:

english

File:

PDF, 449 KB

english, 2003

26

”Reverse” annealing mechanism in ion-doped silicon layers subjected to electron beam heating

R. Gretchel, V. A. Kagadei, N. I. Lebedeva, D. I. Proskurovskii, E. B. Yankelevich

Journal:

Russian Physics Journal

Year:

1989

Language:

english

File:

PDF, 460 KB

english, 1989

27

Formation of a submicron GaAs MESFET gate using a four-layer dielectric dummy gate

V. S. Arykov, A. M. Gavrilova, O. A. Dedkova, V. A. Kagadei, Yu. V. Lilenko

Journal:

Russian Microelectronics

Year:

2012

Language:

english

File:

PDF, 1.43 MB

english, 2012

28

[IEEE 2011 12th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2011) - Erlagol, Altai, Russia (2011.06.30-2011.07.4)] 2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings - Self-aligned multilayer dielectric “dummy gate” technology for GaAs HFET fabrication

Arykov, Vadim S., Gavrilova, Anastasia M., Dedkova, Olga A., Kagadei, Valery A.

Year:

2011

Language:

english

File:

PDF, 210 KB

english, 2011

29

SPIE Proceedings [SPIE International Conference on Micro-and Nano-Electronics 2012 - Zvenlgorod, Russian Federation (Monday 1 October 2012)] International Conference Micro- and Nano-Electronics 2012 - Copper germanium alloys formation by the low temperature atomic hydrogen treatment

Kazimirov, Artyom I., Erofeev, Evgeny V., Kagadei, Valery A., Orlikovsky, Alexander A.

Year:

2013

Language:

english

File:

PDF, 577 KB

english, 2013

30

[IEEE 2011 12th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2011) - Erlagol, Altai, Russia (2011.06.30-2011.07.4)] 2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings - The formation of multilayer resist mask for transistor T-gates fabrication using electron-beam lithography

Anishchenko, Ekaterina V., Erofeev, Evgeny V., Ishutkin, Sergey V., Kagadei, Valery A., Nosaeva, Ksenia S.

Year:

2011

Language:

english

File:

PDF, 276 KB

english, 2011

31

Formation of Ta/Ti/Al/Mo/Au ohmic contacts to an AlGaN/AlN/GaN heterostructure grown on a silicon substrate

Osipov, K. Yu., Velikovskiy, L. E., Kagadei, V. A.

Journal:

Year:

2014

Language:

english

File:

PDF, 461 KB

english, 2014

32

[IEEE 2010 11th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2010) - Novosibirsk, Russia (2010.06.30-2010.07.4)] 2010 11th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices - Investigation of doping profile effect on characteristics of ion-implanted GaAs MESFET

Shestakov, Alexander K., Zhuravlev, Konstantin S., Arykov, Vadim S., Kagadei, Valery A.

Year:

2010

Language:

english

File:

PDF, 588 KB

english, 2010

33

[IEEE 2011 12th International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM 2011) - Erlagol, Altai, Russia (2011.06.30-2011.07.4)] 2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings - Copper Germanium alloys formation by low temperature atomic hydrogen treatment

Kazimirov, Artyom I., Erofeev, Evgeny V., Kagadei, Valery A.

Year:

2011

Language:

english

File:

PDF, 325 KB

english, 2011

34

[IEEE 2010 IEEE 2nd Russia School and Seminar on Fundamental Problems of Micro/Nanosystems Technologies (MNST) - Novosibirsk, Russia (2010.12.9-2010.12.11)] 2010 IEEE 2nd Russia School and Seminar on Fundamental Problems of Micro/Nanosystems Technologis (MNST) - Influence of substrate and doping profile parameters on characteristics of ion-implanted GaAs Schottky-barrier field-effect transistor (MESFET)

Shestakov, Alexander K., Zhuravlev, Konstantin S., Arykov, Vadim S., Kagadei, Valery A.

Year:

2010

Language:

english

File:

PDF, 152 KB

english, 2010

35

[IEEE 2010 IEEE 2nd Russia School and Seminar on Fundamental Problems of Micro/Nanosystems Technologies (MNST) - Novosibirsk, Russia (2010.12.9-2010.12.11)] 2010 IEEE 2nd Russia School and Seminar on Fundamental Problems of Micro/Nanosystems Technologis (MNST) - Self-aligned multilayer dielectric “dummy gate” technology for L-, S- and X-band GaAs MMICs fabrication

Anishchenko, Ekaterina V., Arykov, Vadim S., Gavrilova, Anastasiya M., Dedkova, Olga A., Kagadei, Valery A., Kamchatnaya, Oxana V., Lilenko, Yury V., Yushenko, Aleksey Yu.

Year:

2010

Language:

english

File:

PDF, 258 KB

english, 2010

36

[IEEE 2009 International Siberian Conference on Control and Communications (SIBCON 2009) - Tomsk, Russia (2009.03.27-2009.03.28)] 2009 International Siberian Conference on Control and Communications - Influence of the annealing on the parameters of Shottky barriers to sulfur treated n-GaAs

Erofeev, E.V., Kagadei, V.A., Zaretzkaya, T.V.

Year:

2009

Language:

english

File:

PDF, 417 KB

english, 2009

37

[IEEE Telecommunication Technology" (CriMiCo 2008) - Sevastopol, Ukraine (2008.09.8-2008.09.12)] 2008 18th International Crimean Conference - Microwave & Telecommunication Technology - Study of the improvement of the AuGeNi ohmic contacts to n-GaAs

Erofeev, E. V., Kagadei, V. A.

Year:

2008

File:

PDF, 2.53 MB

2008

38

Investigation of the penetration of atomic hydrogen from the gas phase into SiO[sub 2]/GaAs

Kagadei, V. A., Nefyodtsev, E. V., Proskurovsky, D. I.

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2001

Language:

english

File:

PDF, 367 KB

english, 2001

39

Use of a new type of atomic hydrogen source for cleaning and hydrogenation of compound semiconductive materials

Year:

1998

Language:

english

File:

PDF, 391 KB

english, 1998

40

Simulation of the production of atomic hydrogen in a low-pressure-arc-discharge-based source

Kagadei, V. A., Kozyrev, A. V., Proskurovsky, D. I., Osipov, I. V.

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2001

Language:

english

File:

PDF, 374 KB

english, 2001

41

[IEEE 2009 International Siberian Conference on Control and Communications (SIBCON 2009) - Tomsk, Russia (2009.03.27-2009.03.28)] 2009 International Siberian Conference on Control and Communications - Optimization of the self-aligned GaAs MESFET with the multilayer dielectric “dummy gate“ for a high power microwave applications

Arykov, V.S., Gavrilova, A.M., Kagadei, V.A.

Year:

2009

Language:

english

File:

PDF, 530 KB

english, 2009

42

[IEEE 2010 IEEE Region 8 International Conference on "Computational Technologies in Electrical and Electronics Engineering" (SIBIRCON 2010) - Irkutsk, Russia (2010.07.11-2010.07.15)] 2010 IEEE Region 8 International Conference on Computational Technologies in Electrical and Electronics Engineering (SIBIRCON) - Doping profile influence on characteristics of ion-implanted gaas field effect transistor with the schottky barrier

Shestakov, Alexander K., Zhuravlev, Konstantin S., Arykov, Vadim S., Kagadei, Valery A.

Year:

2010

Language:

english

File:

PDF, 1.29 MB

english, 2010

43

SPIE Proceedings [SPIE International Conference on Micro-and Nano-Electronics 2012 - Zvenlgorod, Russian Federation (Monday 1 October 2012)] International Conference Micro- and Nano-Electronics 2012 - A gold free fully copper metalized GaAs pHEMT for the high frequency applications

Erofeev, Evgeny V., Kagadei, Valery A., Kazimirov, Artyom I., Orlikovsky, Alexander A.

Year:

2013

Language:

english

File:

PDF, 638 KB

english, 2013

44

SPIE Proceedings [SPIE International Conference on Micro- and Nano-Electronics 2009 - Zvenigorod, Russian Federation (Monday 5 October 2009)] International Conference on Micro- and Nano-Electronics 2009 - Formation of Ge/Cu ohmic contacts to n-GaAs with atomic hydrogen pre-annealing step

Erofeev, E., Kagadei, V., Valiev, Kamil A., Orlikovsky, Alexander A.

Year:

2010

Language:

english

File:

PDF, 5.71 MB

english, 2010

45

A Gold Free Aluminum Metalized GaAs PHEMT With Copper Based Air Bridges and Backside

Erofeev, Evgeny V., Arykov, Vadim S., Anishchenko, Ekaterina V., Kagadei, Valery A., Ishutkin, Sergey V., Kazimirov, Artyom I.

Journal:

IEEE Journal of the Electron Devices Society

Year:

2013

Language:

english

File:

PDF, 8.55 MB

english, 2013

46

SPIE Proceedings [SPIE SPIE Proceedings - (Sunday 12 February 2012)] - Low-temperature annealing of ion-doped layers of silicon in hydrogen atom flow

Kagadei, V., Nefyodtsev, E., Romanenko, S., Valiev, Kamil A., Orlikovsky, Alexander A.

Year:

2012

Language:

english

File:

PDF, 392 KB

english, 2012

47

Copper-Metalized GaAs pHEMT with Cu/Ge Ohmic Contacts

Anichenko, E. V., Arykov, V. S., Erofeev, E. V., Kagadei, V. A.

Journal:

International Journal of Microwave Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.70 MB

english, 2012

48

Production of shallow ion-implanted layers using rapid electron-beam annealing under the condition of transient-enhanced outdiffusion

V. A. Kagadei, D. I. Proskurovsky

Year:

2000

Language:

english

File:

PDF, 424 KB

english, 2000

49

[IEEE 2015 International Siberian Conference on Control and Communications (SIBCON) - Omsk, Russia (2015.5.21-2015.5.23)] 2015 International Siberian Conference on Control and Communications (SIBCON) - High threshold voltage p-gate GaN transistors

Erofeev, E.V., Kagadei, V.A., Kazimirov, A.I., Fedin, I.V.

Year:

2015

Language:

english

File:

PDF, 1.60 MB

english, 2015

50

[IEEE 2015 International Siberian Conference on Control and Communications (SIBCON) - Omsk, Russia (2015.5.21-2015.5.23)] 2015 International Siberian Conference on Control and Communications (SIBCON) - Ohmic contacts to n+-GaAs with refractory metal sidewall diffusion barrier

Erofeev, E.V., Kagadei, V.A., Kazimirov, A.I., Fedin, I.V.

Year:

2015

Language:

english

File:

PDF, 609 KB

english, 2015

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